|Drain to Source Voltage||60V|
|Drain to Source Leakage Current||1μA|
|Gate to Source Leakage Current||100nA|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.