CSD18563Q5A

Manufacturer TEXAS INSTRUMENTS
Part Number CSD18563Q5A
Drain to Source Voltage 60V
Drain to Source Leakage Current 1μA
Gate to Source Leakage Current 100nA

FEATURES

  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

APPLICATIONS

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

DESCRIPTION

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Notes:

  • 10-sprocket hole-pitch cumulative tolerance ±0.2
  • Camber not to exceed 1mm in 100mm, noncumulative over 250mm
  • Material: black static-dissipative polystyrene
  • All dimensions are in mm (unless otherwise specified)
  • A0 and B0 measured on a plane 0.3mm above the bottom of the pocket

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