MRFE6S9200HR3

Manufacturer FREESCALE
Part Number MRFE6S9200HR3
Drain-Source Voltage -0.5, +66Vdc
Gate-Source Voltage -0.5, +12Vdc

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain ó 21 dB Drain Efficiency ó 35% Device Output Signal PAR ó 6.36 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset ó -40 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness.

Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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