High Speed Infrared Emitting Diode, 850 nm
|Peak forward current||200mA|
|Surge forward current||1A|
VSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
DH technology combines high speed with high radiant power at wavelength of 850 nm.
PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape.
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a des- iccant.
Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor Life: 4 weeks Conditions: T amb < 30 °C, RH < 60 % Moisture Sensitivity Level 2a, acc. to J-STD-020B.
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %.
A maximum of 0.5 % of the total number of compo- nents per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components.
The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty comparte- ments. The tape leader may include the carrier tape as long as the cover tape is not connected to the car- rier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape.
The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent compo- nents from popping out of the bliesters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction.