AON7406 N-Channel Enhancement Mode Field Effect Transistor

ManufacturerALPHA & OMEGA SEMICONDUCTORS
Part NumberAON7406
Drain-Source VoltageMAX 30V
Gate-Source VoltageMAX ±20V
Pulsed Drain Current 50A
Junction and Storage Temperature Range-55 to 150°C

AON7406 N-Channel Enhancement Mode Field Effect Transistor

General Description

The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7406 is Pb-free (meets ROHS & Sony 259 specifications).

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