AON7406 N-Channel Enhancement Mode Field Effect Transistor
|Manufacturer||ALPHA & OMEGA SEMICONDUCTORS|
|Drain-Source Voltage||MAX 30V|
|Gate-Source Voltage||MAX ±20V|
|Pulsed Drain Current||50A|
|Junction and Storage Temperature Range||-55 to 150°C|
The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7406 is Pb-free (meets ROHS & Sony 259 specifications).